1.

国際会議録
国際会議録
1. CURRICULUM VITAE OF OXIDE PRECIPITATES: FROM NUCLEATION DURING CRYSTAL GROWTH TO THEIR FINAL DESTINATION IN PROCESSED WAFERS
Kissinger, G. ; Vanhellemont, J. ; Lambert, U. ; Dornberger, E. ; Sorge, R. ; Morgenstern, G. ; Grabolla, T. ; Graef, D. ; von Ammon, W. ; Wagner, P. ; Richter, H.
出版情報: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.1095-1112,  1998.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 98-1(2)
2.

国際会議録
国際会議録
2. Oxygen Precipitation and Stacking Fault Formation in Wafers with a Transition from Vacancy-Rich to Interstitial-Rich
Kissinger, G. ; Morgenstern, G. ; Grabolla, T. ; Richter, H. ; Vanhellemont, J. ; Lambert, U. ; Graef, D.
出版情報: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.158-169,  1998.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 98-13
3.

国際会議録
国際会議録
3. Grown-in oxide precipitate nuclei in Czochralski silicon substrates and their role in device processing
Kissinger, G. ; Grabolla, T. ; Morgenstern, G. ; Richter, H. ; Graef, D. ; Vanhellemont, J. ; Lambert, U. ; von Ammon, W.
出版情報: Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II.  pp.74-87,  1997.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 97-22
4.

国際会議録
国際会議録
4. D-defects and metal-related flow patterns
Kissinger, G. ; Morgenstern, G. ; Richter, H. ; Vanhellemont, J. ; Graef, D. ; Lambert, U. ; von Ammon, W. ; Wagner, P.
出版情報: Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II.  pp.32-39,  1997.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 97-22
5.

国際会議録
国際会議録
5. Influence of Boron Doping on Oxide Precipitate Nucleation and Gettering of Iron Impurities in Low Thermal Budget Processing of Czochralski Silicon
Kissinger, G. ; Vanhellemont, J. ; Morgenstern, G. ; Blietz, M. ; Tittelbach-Helmrich, K. ; Obermejer, G. ; Wahlich, R.
出版情報: Proceedings of the Third International Symposium on Defects in Silicon.  pp.268-279,  1999.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 99-1
6.

国際会議録
国際会議録
6. Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density
Kissinger, G. ; Morgenstern, T. ; Morgenstern, G. ; Erzgraber, H. B. ; Richter, H.
出版情報: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.141-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 378
7.

国際会議録
国際会議録
7. DEFECT GROWTH INTERRUPTION PHENOMENA RELATED TO IMPURITY ATOMS IN GROWING MULTILAYER Si-Si1-xGex SYSTEMS DEPOSITED BY APCVD
Babanskaya, I. ; Lippert, G. ; Kruger, D. ; Methfessel, M. ; Morgenstern, G. ; Morgenstern, T.
出版情報: Defect-interface interactions : symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A..  pp.171-,  1994.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 319
8.

国際会議録
国際会議録
8. Stepwise Equilibrated Gradcd GexSi1-x Buffers Grown by APCVD
Kissinger, G. ; Morgenstern, T. ; Frzgraber, H.B. ; Morgenstern, G. ; Fisher, G.G. ; Kissinger, W. ; Richter, H.
出版情報: Proceedings of the Thirteenth International Symposium on Chemical Vapor Deposition.  pp.366-373,  1996.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 96-5