1.

国際会議録
国際会議録
1. DX centers in Si-doped Al.Ga1-xAs containing boron
Mooney,P.M. ; Tischler,M.A. ; Parker,B.D.
出版情報: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.2  pp.829-834,  1992.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 83-87
2.

国際会議録
国際会議録
2. Determination of the FR3 Acceptor Level by Direct Excitation of the FR3 EPR in Undoped Semiinsulating GaAs
Baeumler,M. ; Mooney,P.M. ; Kaufmann,U.
出版情報: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part2  pp.785-790,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 38-41
3.

国際会議録
国際会議録
3. Dislocation-related electronic states in strain-relaxed Si1-xGex/Si epitaxial layers grown at low temperature.(Invited)
Mooney,P.M. ; Shum,Kai
出版情報: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.151-158,  1997.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 258-263
4.

国際会議録
国際会議録
4. Alloy Effects on Emission Rates for Deep Donors(DX Centers)in AlxGa1-xAS with very low AlAS Mole Fraction
Mooney,P.M. ; Theis,T.N. ; Wright,S.L.
出版情報: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part3  pp.1109-1114,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 38-41
5.

国際会議録
国際会議録
5. Origin of Mosaic Structure in Relaxed Si1x-Gex Layers
Mooney,P.M. ; LeGoues,F.K. ; Chu,J.O.
出版情報: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.483-488,  1994.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 143-147