High performance strained-SOl CMOSFETs
- 著者名:
Takagi, S-I. Mizuno, T. Tezuka, T. Sugiyama, N Numata, T. Usuda, K. Monyama, Y. Nakaharai, S. Koga, J. Tanabe, A. Maeda, T. - 掲載資料名:
- Silicon-on-insulator technology and devices XI : proceedings of the international symposium
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2003-5
- 発行年:
- 2003
- 開始ページ:
- 159
- 終了ページ:
- 174
- 総ページ数:
- 16
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566773751 [156677375X]
- 言語:
- 英語
- 請求記号:
- E23400/200305
- 資料種別:
- 国際会議録
類似資料:
Electrochemical Society |
7
国際会議録
(11.2) 3:40 - 4:00 PM - Formation Mechanism of Ge-on-lnsulator Layers by Ge-condensation Technique
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
Materials Research Society |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
5
国際会議録
(6.4) 11:55 - 12:15 PM - Ge Diffusion Effect on Low Frequency Noise in Ultra-thin Strained-SOI CMOS
Electrochemical Society |
Electrochemical Society |
6
国際会議録
Strain Relaxation of Strained-Si Layers on SiGe-on-Insulator (SGOI) Structures After Mesa Isolation
Materials Research Society |
Electrochemical Society |