1.

国際会議録
国際会議録
1. STRUCTURAL CHARACTERIZATION OF GaP/GaAs/GaP HETEROSTRUCTURE BY TEM
Aragon, G. ; Molina, S.I. ; Garcia, R.
出版情報: Evolution of surface and thin film microstructure : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.449-452,  1993.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 280
2.

国際会議録
国際会議録
2. Correlation Between the AlN Buffer Layer Thickness and the GaN Polarity in GaN/AlN/Si(111) Grown by MBE
Sanchez, A.M. ; Ruterana, P. ; Vennegues, P. ; Semond, F. ; Pacheco, F.J. ; Molina, S.I. ; Garcia, R. ; Sanchez-Garcia, M.A. ; Calleja, E.
出版情報: GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A..  pp.157-162,  2002.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 743
3.

国際会議録
国際会議録
3. Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates
Morales, F.M. ; Ponce, A. ; Molina, S.I. ; Araujo, D. ; Garcia, R. ; Ristic, J. ; Sanchez-Garcia, M.-A. ; Calleja, E. ; Cimalla, V. ; Pezoldt, J.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.1003-1003,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
4.

国際会議録
国際会議録
4. Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111)
Morales, F.M. ; Zgheib, Ch. ; Molina, S.I. ; Araujo, D. ; Garcia, R. ; Fernandez, C. ; Sanz-Hervas, A. ; Masri, P. ; Weih, P. ; Stauden, Th. ; Ambacher, O. ; Pezoldt, J.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.297-300,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
5.

国際会議録
国際会議録
5. Effect of High Temperature Single and Multiple AlN Intermediate Layers on N-Polar and Ga-Polar GaN Grown by Molecular Beam Epitaxy
Fedler, F. ; Stemmer, J. ; Hauenstein, R.J. ; Rotter, T. ; Sanchez, A.M. ; Ponce, A. ; Molina, S.I. ; Mistele, D. ; Klausing, H. ; Semchinova, O. ; Aderhold, J. ; Graul, J.
出版情報: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.177-182,  2002.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 693
6.

国際会議録
国際会議録
6. Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC
Morales, F.M. ; Molina, S.I. ; Araujo, D. ; Cimalla, V. ; Pezoldt, J.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.285-288,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
7.

国際会議録
国際会議録
7. Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-Epitaxy
Bustarret, E. ; Araujo, D. ; Mendez, D. ; Morales, F.M. ; Pacheco, F.J. ; Molina, S.I. ; Rochat, N. ; Ferro, G. ; Monteil, Y.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.277-280,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460