1.

国際会議録
国際会議録
1. Luminescence and EPR Characterization of Vanadium Doped Semi-Insulating 4H SiC
Kalabukhova, E.N. ; Savchenko, D.V. ; Greulich-Weber, S. ; Bulanyi, M.F. ; Omelchenko, S.A. ; Khmelenko, O.V ; Gorban, A.A. ; Mokhov, E.N.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.651-654,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
2.

国際会議録
国際会議録
2. Evidence of the Ground Triplet State of Silicon-Carbon Divacancies (P6, P7 Centers) in 6H SiC: An EPR Study
Ilyin, I.V. ; Muzafarova, M.V. ; Mokhov, E.N. ; Sankin, V.I. ; Baranov, P.G. ; Orlinskii, S.B. ; Schmidt, J.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.535-538,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
3.

国際会議録
国際会議録
3. Identification of the Triplet State N-V Defect in Neutron Irradiated Silicon Carbide by Electron Paramagnetic Resonance
Muzafarova, M.V. ; Ilyin, I.V. ; Mokhov, E.N. ; Sankin, V.I. ; Baranov, P.G.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.555-558,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
4.

国際会議録
国際会議録
4. Modeling Analysis of Free-Spreading Sublimation Growth of SiC Crystals
Bogdanov, M.V. ; Demina, S.E. ; Karpov, S.Yu. ; Kulik, A.V. ; Ofengeim, D.Kh. ; Ramm, M.S. ; Mokhov, E.N. ; Roenkov, A.D. ; Vodakov, Yu.A. ; Makarov, Yu.A. ; Helava, H.
出版情報: Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.23-28,  2003.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 742
5.

国際会議録
国際会議録
5. Intrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement Threshold
von Bardeleben, H.J. ; Cantin, J.L. ; Baranov, P.G. ; Mokhov, E.N.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.509-512,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
6.

国際会議録
国際会議録
6. The Neutral Silicon Vacancy in SiC: Ligand Hyperfine Interaction
Wagner, Mt. ; Thinh, N.Q. ; Son, N.T. ; Baranov, P.G. ; Mokhov, E.N. ; Hallin, C. ; Chen, W.M. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.501-504,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
7.

国際会議録
国際会議録
7. EPR of Deep Al and Deep B in Heavily Al-doped as Grown 4H-SiC
Ilyin, I.V. ; Mokhov, E.N. ; Baranov, P.G.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.521-524,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
8.

国際会議録
国際会議録
8. The Electronic Structure of the N Donor Center in 4H-SiC and 6H-SiC
van Duijn-Arnold, A. ; Zondervan, R. ; Baranov, P.G. ; Mokhov, E.N. ; Schmidt, J.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.525-528,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
9.

国際会議録
国際会議録
9. Identification of Iron and Nickel in 6H-SiC by Electron Paramagnetic Resonance
Baranov, P.G. ; Ilyin, I.V. ; Mokhov, E.N. ; Khramtsov, V.A.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.529-532,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
10.

国際会議録
国際会議録
10. Growth of AlN Bulk Crystals by Sublimation Sandwich Method
Mokhov, E.N. ; Roenkov, A.D. ; Vodakov, Yu.A. ; Karpov, S.Yu. ; Ramm, M.S. ; Segal, A.S. ; Makarov, Yu.A. ; Helava, H.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.979-982,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436