1.

国際会議録
国際会議録
1. A Comparison of Various Surface Finishes and the Effects on the Early Stages of Pore Formation during High Field Etching of SiC
Ke, Y. ; Moisson, C. ; Gaan, S. ; Feenstra, R.M. ; Devaty, R.P. ; Choyke, W.J.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.743-746,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
2.

国際会議録
国際会議録
2. Processing of Poly-SiC Substrates with Large Grains for Wafer-Bonding
Chichignoud, G. ; Auvray, L. ; Blanquet, E. ; Anikin, M. ; Pernot, E. ; Bluet, J.M. ; Chaudouet, P. ; Mermoux, M. ; Moisson, C. ; Letertre, F. ; Pons, M. ; Madar, R.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.71-74,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
3.

国際会議録
国際会議録
3. Regrowth of 3C-SiC on CMP Treated 3C-SiC/Si Epitaxial Layers
Mank, H. ; Moisson, C. ; Turover, D. ; Twigg, M. ; Saddow, S. E.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.197-200,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485