1.

国際会議録
国際会議録
1. Impact of Annealing Temperature Ramps on the Electrical Activation of N+ and P+ Co-Implanted SiC I.ayers
Blanque, S. ; Perez, R. ; Mestres, N. ; Contreras, S. ; Camassel, J. ; Godignon, P.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.795-798,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
2.

国際会議録
国際会議録
2. Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFETs Measured in Strong Inversion
Perez-Tomas, A. ; Vellvehi, M. ; Mestres, N. ; Millan, J. ; Vennegues, P. ; Stoemenos, J.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1059-1062,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
3.

国際会議録
国際会議録
3. PECVD Deposited TEOS for Field-Effect Mobility Improvement in 4H-SiC MOSFETs on the (0001) and (11-20) Faces
Perez-Tomas, A. ; Godignon, P. ; Camassel, J. ; Mestres, N. ; Souliere, V.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1047-1050,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
4.

国際会議録
国際会議録
4. Damage Reduction in Channeled Ion Implanted 6H-SiC
Morvan, E. ; Mestres, N. ; Campos, F. J. ; Pascual, J. ; Anders, Hallen ; Linnarsson, M. K. ; Kuznetsov, A. Yu.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.893-896,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(2)
5.

国際会議録
国際会議録
5. *CuPt ordering signatures of phonons in GaInP2
Alsina, F. ; Cheong, H. M. ; Mestres, N. ; Pascual, J. ; Mascarenhas, A.
出版情報: Self-organized processes in semiconductor alloys : symposium held November 29-December 2, 1999 Boston, Massachusetts, U.S.A..  pp.223-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 583
6.

国際会議録
国際会議録
6. Highly-Doped Implanted pn Junction for SiC Zener Diode Fabrication
Godignon, P. ; Jorda, X. ; Nipoti, R. ; Cardinali, G. ; Mestres, N.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1317-1320,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
7.

国際会議録
国際会議録
7. Infrared Investigation of Implantation Damage in 6H-SiC
Camassel, J. ; Wang, H. ; Pernot, J. ; Godignon, P. ; Mestres, N. ; Pascual, J.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.859-862,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
8.

国際会議録
国際会議録
8. 4H-SiC MIS Structures Using Oxidized Ta2Si as High-k Dielectric
Perez-Tomas, A. ; Godignon, P. ; Mestres, N. ; Tournier, D. ; Montserrat, J. ; Millan, J.
出版情報: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.211-216,  2004.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 815
9.

国際会議録
国際会議録
9. Temperature Dependence of 4H-SiC JBS and Schottky Diodes after High Temperature Treatment of Contact Metal
Perez, R. ; Mestres, N. ; Tournier, D. ; Jorda, X. ; Vellvehi, M. ; Godignon, P.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.945-948,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
10.

国際会議録
国際会議録
10. 4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N2O
Perez-Tomas, A. ; Tournier, D. ; Godignon, P. ; Mestres, N. ; Millan, J.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.673-676,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485