1.

国際会議録
国際会議録
1. Impurity Incorporation Mechanism in Step-Controlled Epitaxy Growth Temperature and Substrate Off-Angle Dependence
Yamamoto,T. ; Kimoto,T. ; Matsunami,H.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.111-114,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
2.

国際会議録
国際会議録
2. Implantation of Al and B Acceptors into Alpha-SiC and pn Junction Diodes
Takemura,O. ; Kimoto,T. ; Matsunami,H. ; Nakata,T. ; Watanabe,M. ; Inoue,M.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.701-704,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
3.

国際会議録
国際会議録
3. Conductivity Control of SiC by In-Situ Doping and Ion Implantation
Kimoto,T. ; Itoh,A. ; Inoue,N. ; Takemura,O. ; Yamamoto,T. ; Nakajima,T. ; Matsunami,H.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.675-680,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
4.

国際会議録
国際会議録
4. Oxygen-Related Defect Centers in 4H Silicon Carbide
Dalibor,T. ; Pensl,G. ; Yamamoto,T. ; Kimoto,T. ; Matsunami,H. ; Sridhara,S.G. ; Nizhner,D.G. ; Devaty,R.P. ; Choyke,W.J.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.553-556,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
5.

国際会議録
国際会議録
5. Gas Source Molecular Beam Epitaxial Growth of 3C-SiC on Si with Heterointerface Modification by a Si-C-Ge Ternary System
Hatayama,T. ; Fuyuki,T. ; Matsunami,H.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.235-238,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
6.

国際会議録
国際会議録
6. Deep States in SiO2/p-Type 4H-SiC Interface
Yano,H. ; Inoue,N. ; Kimoto,T. ; Matsunami,H.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.841-844,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268