1.

国際会議録
国際会議録
1. ON THE ORIGIN OF THE NEW ELECTRON TRAPS INDUCED BY RAPID THERMAL ANNEALING IN GaAs USING CAPPING PROXIMITY TECHNIQUE
Marrakchi, G. ; Chaussemy, G. ; Laugier, A. ; Guillot, G.
出版情報: Advances in materials, processing, and devices in III-V compound semiconductors.  pp.27-32,  1989.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 144
2.

国際会議録
国際会議録
2. A COMPARATIVE STUDY OF DIFFERENT RAPID ANNEALING TECHNIQUES ON ELECTRICALLY ACTIVE DEFECTS IN UNIMPLANTED GALLIUM ARSENIDE
Marrakchi, G. ; Guillot, G. ; Nouailhat, A.
出版情報: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.509-514,  1988.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 104
3.

国際会議録
国際会議録
3. CORRELATION OF THE 0.8 Ev EMISSION BAND WITH THE EL6 CENTER IN GaAs
Alaya, S. ; Zaidi, M.A. ; Marrakchi, G. ; Maaref, H. ; von Bardeleben, H.J. ; Bourgoin, J.C.
出版情報: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.163-168,  1990.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 163
4.

国際会議録
国際会議録
4. DEEP DONOR AND ACCEPTOR LEVELS INDUCED BY HIGH TEMPERATURE AND LONG TIME ANNEALING IN LEC GALLIUM ARSENIDE
Marrakchi, G. ; Kalboussi, A. ; Guillot, G. ; Ben Salem, M. ; Maaref, H. ; Molva, E.
出版情報: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.859-864,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 240
5.

国際会議録
国際会議録
5. Low-temperature photoluminescence photoinduced current spectroscopy on CdZnTe grown by high-pressure bridgman technique
Zerrai, A. ; Cherkaoui, K. ; Mergui, S. ; Zumbiehl, A. ; Hage-Ali, M. ; Marrakchi, G. ; Bremond, G.
出版情報: Optical microstructural characterization of semiconductors : sympoisum held November 29-30, 1999, Boston, Massachusetts, U.S.A..  pp.67-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 588
6.

国際会議録
国際会議録
6. Electrical and optical properties of Yb, Er doped GaAs
Benyattou, T. ; Seghier, D. ; Bremond, G. ; Moneger, S. ; Kalboussi, A. ; Marrakchi, G. ; Guillot, G. ; Lhomer, C. ; Lambert, B. ; Toudic, Y. ; Corre A. Le
出版情報: Rare earth doped semiconductors : symposium held April 13-15, 1993, San Francisco, California, U.S.A..  pp.163-,  1993.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 301