1.

国際会議録
国際会議録
1. Effect of stress and dopant redistribution on trench-isolated narrow devices
Scott,G.S. ; Nouri,F. ; Rubin,M.E. ; Manley,M. ; Stolk,P.
出版情報: Challenges in process integration and device technology : 18-19 September 2000, Santa Clara, USA.  pp.183-190,  2000.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 4181
2.

国際会議録
国際会議録
2. Optimized shallow trench isolation for sub-0.18-ｦﾌm ASIC technologies
Nouri,F. ; Laparra,O. ; Sur,H. ; Saha,S. ; Pramanik,D. ; Manley,M.
出版情報: Microelectronic device technology II : 23-24 September, 1998, Santa Clara, California.  pp.156-166,  1998.  Bellingham, Washington.  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 3506
3.

国際会議録
国際会議録
3. Plasma-induced oxide contamination in a 0.35-ｦﾌm CMOS process
Karnett,M.P. ; Zhou,J. ; Ghosh,S. ; Echtle,D. ; Fritz,L. ; Manley,M. ; Scott,G.
出版情報: Microelectronic Manufacturing Yield, Reliability, and Failure Analysis II.  pp.327-331,  1996.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 2874
4.

国際会議録
国際会議録
4. Systematic methodology for optimizing the trade-off of polysilicon depletion versus boron penetration in sub-0.18-ｦﾌm surface-channel PMOS devices
Scott,G.S. ; Saha,S.K. ; Olsen,C.S. ; Nouri,F. ; Lutze,J. ; Rubin,M.E. ; Manley,M.
出版情報: Microelectronic Device Technology III.  pp.129-137,  1999.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 3881