The Profile Control of n-type Doping in Low and High Temperature Si Epitaxy for High Frequency Bipolar Transistors
- 著者名:
Radamson, H.H. Mohadjeri, B. Malm, B.G. Grahn, J.V. Oestling, M. Landgren, G. - 掲載資料名:
- CVD XV, proceedings of the fifteenth International Symposium on Chemical Vapor Deposition
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2000-13
- 発行年:
- 2000
- 開始ページ:
- 427
- 終了ページ:
- 434
- 総ページ数:
- 8
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566772785 [1566772788]
- 言語:
- 英語
- 請求記号:
- E23400/200013
- 資料種別:
- 国際会議録
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