As antisite-related defects detected by spin dependent recombination in delta-doped(Si)GaAs grown by MBE at low temperature

As antisite-related defects detected by spin dependent recombination in delta-doped(Si)GaAs grown by MBE at low temperature

著者名:

掲載資料名:

Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997

シリーズ名:

Materials science forum

シリーズ巻号:

258-263

発行年:

1997

巻:

Part2

開始ページ:

957

終了ページ:

962

出版情報:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497881 [0878497889]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019291
シリーズID:	PA00000012
会議名:	International Conference on Defects in Semiconductors : ICDS
回次:	19th
会議開催地:	Aveiro, Portugal
会議開催年:	1997.07.00

類似資料:

1 国際会議録 Observation of persistent electron capture in n-type gallium arsenide studied by optically detected magnetic resonance Krambrock,K., Pinheiro,M.V.B., Wietzke,K.-H., Spaeth,J.-M. Trans Tech Publications	7 国際会議録 DEFECTS IN LOW-TEMPERATURE-GROWN MBE GaAs Look, David C. MRS - Materials Research Society
2 国際会議録 Magneto-optical and magnetic resonance investigations of intrinsic defects in electron-irradiated n-type AlXGa1-XAs Wietzke,K.-H., Pinheiro,M.V.B., Koschnick,F.K., Krambrock,K., Spaeth,J.-M. Trans Tech Publications	8 国際会議録 Electrical Characterization of Beryllium Doped Low-Temperature MBE Grown GaAs Cich, M. J., Zhao, R., Park, Y., Specht, P., Weber, E. R. MRS - Materials Research Society
3 国際会議録 On the Microscopic Structures of Three Different Arsenic Antisite-Related Defects in Gallium Arsenide Studied by Optically Detected Electron Nuclear Double … Spaeth,J.-M., Krambrock,K., Hesse,M. Trans Tech Publications	9 国際会議録 STOICHIOMETRY RELATED PHENOMENA IN LOW TEMPERATURE GROWN GaAs Missous, M., O'Hagan, S. MRS - Materials Research Society
4 国際会議録 The isolated arsenic antisite defect and EL2-an ODMR investigation of electron irradiated GaAs Krambrock,K., Spaeth,J.-M. Trans Tech Publications	10 国際会議録 Spin Dependent Recombination in Si p-n Junctions Meyer, B.K., Christmann, P., Stadler, W., Overhof, H., Spaeth, J-M., Greulich-Weber, S., Stich, B. Electrochemical Society
5 国際会議録 Arsenic-Antisite-Related Defects in GaAs Grown at Low Temperature:Characterization of Localized States Landman,J.I., Morgan,C.G., Schick,J.T., Kumar,A., Papoulias,P., Kramer,M.F. Trans Tech Publications	11 国際会議録 Defect related recombination processes in low-dimensional structures of ZnCdSe/ZnSe,CdTe/CdMnTe and GaAs/AlGaAs Godlewski,M., Hommel,D., Wojtowicz,T., Karczewski,G., Kossut,J., Reginski,K., Bugajski,M., Bergman,J.P., Monemar,B. Trans Tech Publications
6 国際会議録 Defects in Low-Temperature MBE-Grown Si and SiGe/Si Structures Chen, W. M., Buyanova, I. A., Monemar, B. MRS - Materials Research Society	12 国際会議録 Carbon Related Split-Interstitials in Electron-Irradiated n-type 6H-SiC Pinheiro, M.V.B., Rauls, E., Gerstmann, U., Greulich-Weber, S., Spaeth, J.M., Overhof, H. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12