Effective solution to reticle haze formation at 193nm lithography

Effective solution to reticle haze formation at 193nm lithography

著者名:

W.-J. Tseng ( Rexchip Electronics Corp., Taiwan )
S.-H. Chiou ( Rexchip Electronics Corp., Taiwan )
M.-C. Chiu ( Gudeng Precision Industrial Co., Ltd., Taiwan )
P.-S. Lee ( Gudeng Precision Industrial Co., Ltd., Taiwan )

掲載資料名:

Lithography Asia 2008

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

7140

発行年:

2008

巻:

1

開始ページ:

71401V-1

終了ページ:

71401V-8

総ページ数:

8

出版情報:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819473813 [0819473812]

言語:

英語

請求記号:

P63600/7140

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00052771
シリーズID:	PA00000029
会議名:	Lithography Asia
回次:	2008
会議開催地:	Taipei, Taiwan
会議開催年:	2008.11.04-2008.11.06
論文注記:	Lithography Asia 2008, 4-6 November 2008, Taipei, Taiwan - Litho Mask Technology, 71401V, 7140-67

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2 国際会議録 Analysis of adsorption effect of absorbent and threshold limit value (TLV) of Q-time for 193nm ArF reticle haze resistance F.-S. Chu, S.-H. Chiou Society of Photo-optical Instrumentation Engineers	8 国際会議録 Study of time dependent 193 nm reticle haze J. Gordon, L. Frisa, C. Chovino, D. Chan, J. Keagy Society of Photo-optical Instrumentation Engineers
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