1.

国際会議録
国際会議録
1. Mechanism of Orientation Selection for the Growth Of (111) Twin Boundary Free 3C-SiC Single Crystals on Hexagonal Basis
L. Latu-Romain ; D. Chaussende ; L. Rapenne ; M. Pons ; R. Madar
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.199-202,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
2.

国際会議録
国際会議録
2. Influence of the N/AI Ratio in the Gas Phase on the Growth of AIN by High Temperature Chemical Vapor Deposition (HTCVD)
A. Claudel ; E. Blanquet ; D. Chaussende ; D. Pique ; M. Pons
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.987-990,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
3.

国際会議録
国際会議録
3. Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase
D. Chaussende ; J. Eid ; F. Mercier ; R. Madar ; M. Pons
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.31-36,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
4.

国際会議録
国際会議録
4. Top Seeded Solution Growth of 3C-SiC Single Crystals
F. Mercier ; D. Chaussende ; J.M. Dedulle ; M. Pons ; R. Madar
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.41-44,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
5.

国際会議録
国際会議録
5. Modeling Approach of a New Anode Concept for Gradual Internal Reforming
J. Klein ; Y. Bultel ; S. Georges ; M. Pons
出版情報: Solid oxide fuel cells 10 (SOFC-X).  pp.1419-1428,  2007.  Pennington, NJ.  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 7(1)
6.

国際会議録
国際会議録
6. Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals
G.L. Sun ; I.G. Galben-Sandulache ; T. Ouisse ; J.M. Dedulle ; M. Pons
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.63-66,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
7.

国際会議録
国際会議録
7. Silicon Carbide Growth:C/Si Ratio Evaluation and Modeling
M. Pons ; S. Nishizawa ; P.J. Wellmann ; E. Blanquet ; D. Chaussende
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.83-88,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
8.

国際会議録
国際会議録
8. Comparative Study of Differently Grown 3C-SiC Single Crystals with Birefringence Microscopy
D. Chaussende ; F. Mercier ; R. Madar ; M. Pons
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.71-76,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603