1.

国際会議録
国際会議録
1. X-Ray Irradiation on 4H-SiC MOS Capacitors Processed under Different Annealing Conditions
M. Vivona ; P. Fiorenza ; S. Di Franco ; C. Marcandella ; M. Gaillardin
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.659-662,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
2.

国際会議録
国際会議録
2. Modelling the Back-Gate Coupling effect in Triple-, Π- and Ω-Gate FETs
R. Rilzenthaler ; M. Gaillardin ; K. Akarvardar ; O. Faynot ; C. Jahan ; S. Cristoloveanu
出版情報: Silicon-on-insulator technology and devices 13.  pp.89-94,  2007.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 6(4)