1.

国際会議録
国際会議録
1. Analysis of Dislocation Behavior in Low Dislocation Density, PVT-Grown, Four-Inch Silicon Carbide Single Crystals
M. Dudley ; S. Byrappa ; H. Wang ; F. Wu ; Y. Zhang ; B. Raghothamachar ; G. Choi ; E.K. Sanchez ; D. Hansen ; R. Drachev ; M.J. Loboda
出版情報: Silicon Carbide 2010--materials, processing and devices : symposium held April 5-9, 2010, San Francisco, California.  1246  pp.29-36,  2010.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 1246
2.

国際会議録
国際会議録
2. Measurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-Ray Topography
H.H. Wang ; F.Z. Wu ; M. Dudley ; B. Raghothamachar ; G. Chung
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.328-331,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
3.

国際会議録
国際会議録
3. Nucleation of c-Axis Screw Dislocations at Substrate Surface Damage during 4H-Silicon Carbide Homo-Epitaxy
M. Dudley ; N. Zhang ; Y. Zhang ; B. Raghothamachar ; E.K. Sanchez
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.295-298,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
4.

国際会議録
国際会議録
4. Defect Reduction and Its Mechanism of Selective Ge Epitaxy in Trenches on Si(001) Substrates Using Aspect Ratio Trapping
J.-S. Park ; J. Bai ; M. Curtin ; B. Adekore ; Z. Cheng ; M. Carroll ; M. Dudley ; A. Lochtefeld
出版情報: Semiconductor defect engineering--materials, synthetic structures and devices II : symposium held April 9-13, 2007, San Francisco, California, U.S.A..  994  pp.315-320,  2007.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 994
5.

国際会議録
国際会議録
5. The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC
F.Z. Wu ; M. Dudley ; H.H. Wang ; S. Byrappa ; S. Sun
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.217-220,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
6.

国際会議録
国際会議録
6. Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density
M. Dudley ; N. Zhang ; Y. Zhang ; B. Raghothamachar ; S. Byrappa
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.291-294,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
7.

国際会議録
国際会議録
7. Behavior of Basal Plane Dislocations and Low Angle Grain Boundary Formation in Hexagonal Silicon Carbide
Y. Chen ; G. Dhanaraj ; W.M. Vetter ; R.H. Ma ; M. Dudley
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  556-557  pp.231-234,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
8.

国際会議録
国際会議録
8. Mosaicity and Wafer Bending in SiC Wafers as Measured by Double and Triple Crystal X-Ray Rocking Curve and Peak Position Maps
K.W. Kirchner ; K.A. Jones ; M.A. Derenge ; M. Dudley ; A.R. Powell
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  556-557  pp.213-218,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
9.

国際会議録
国際会議録
9. Synchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC
F.Z. Wu ; H.H. Wang ; S. Byrappa ; B. Raghothamachar ; M. Dudley
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.343-346,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
10.

国際会議録
国際会議録
10. Studies of the Distribution of Elementary Threading Screw Dislocations in 4H Silicon Carbide Wafer
Y. Chen ; N. Zhang ; X.R. Huang ; D.R. Black ; M. Dudley
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.301-304,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603