1.

国際会議録
国際会議録
1. Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes
T. Makino ; M. Deki ; S. Onoda ; N. Hoshino ; H. Tsuchida
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.575-578,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
2.

国際会議録
国際会議録
2. Instability of Critical Electric Field in Gate Oxide Film of Heavy Ion Irradiated SiC MOSFETs
M. Deki ; T. Makino ; K. Kojima ; T. Tomita ; T. Ohshima
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.673-676,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
3.

国際会議録
国際会議録
3. Electronic Properties of Femtosecond Laser Induced Modified Spots on Single Crystal Silicon Carbide
T. Tomita ; M. Iwami ; M. Yamamoto ; M. Deki ; S. Matsuo
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.239-242,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
4.

国際会議録
国際会議録
4. Temperature Dependence of Electric Conductivities in Femtosecond Laser Modified Areas in Silicon Carbide
M. Deki ; T. Oka ; S. Takayoshi ; Y. Naoi ; T. Makino
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.661-664,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
5.

国際会議録
国際会議録
5. Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses
M. Deki ; T. Makino ; K. Kojima ; T. Tomita ; T. Ohshima
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.440-443,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780