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Comparison of partially and fully depleted SOI transistors down to the sub 50-nm-gate length regime

著者名:
Dreeskornfeld, L.
Hartwich, J.
Landgraf, E.
Luyken, R.J.
Roesner, W.
Schulz, T.
Staedele, M.
Schmitt-Landsiedel, D.
Risch, L.
さらに 4 件
掲載資料名:
Silicon-on-insulator technology and devices XI : proceedings of the international symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2003-5
発行年:
2003
開始ページ:
361
終了ページ:
366
総ページ数:
6
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773751 [156677375X]
言語:
英語
請求記号:
E23400/200305
資料種別:
国際会議録

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