1.

国際会議録
国際会議録
1. Electrical Performance of MOS Devices with Plasma Deposited ZrO2-SiO2 Pseudo-Binary Silicate Alloys
Therrien, R. ; Rayner, B. ; Lucovsky, C.
出版情報: The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000.  pp.495-504,  2000.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2000-2
2.

国際会議録
国際会議録
2. Electrical Performance of Stacked High-ti Gate Dielectrics: Remote Plasma CVD Ta2O5 and (Ta2O5)x(SiO2)1-x Alloys with Ultrathin Plasma Processed Si02 Interface Layers
Niimi, H. ; Johnson, R.S. ; Lucovsky, C. ; Massoud, H.Z.
出版情報: The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000.  pp.487-494,  2000.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2000-2