1.

国際会議録
国際会議録
1. Observation of a configurationally unstable defect in Si
Londos,C.A.
出版情報: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.1  pp.351-356,  1992.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 83-87
2.

国際会議録
国際会議録
2. The Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350°C and 500°C
McQuaid,S.A. ; Londos,C.A. ; Binns,M.J. ; Newman,R.C. ; Tucker,J.H.
出版情報: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.2  pp.963-968,  1994.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 143-147
3.

国際会議録
国際会議録
3. Peculiarities of the thermal donor formation in Czochralski-grown silicon under high hydrostatic pressure
Emtsev,V.V. ; Emtsev,V.V. ; Oganesyan,G.A. ; Misiuk,A. ; Londos,C.A.
出版情報: International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals.  pp.81-84,  2000.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 4412
4.

国際会議録
国際会議録
4. Effect of high-pressure high-temperature treatment on neutron-irradiation-induced defects in Czochralski silicon
Londos,C.A. ; Fytros,L.G. ; Misiuk,A. ; Bak-Misiuk,J. ; Prujszczyk,M. ; Potsidou,M.
出版情報: International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals.  pp.91-96,  2000.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 4412