1.

国際会議録
国際会議録
1. Characterization and modeling of Defects in High-k Layers Through Fast Electrical Transient Measurements
Mitard, J. ; Leroux, C. ; Reimbold, G. ; Garros, X. ; Martin, F. ; Ghibaudo, G.
出版情報: Defects in high-κ gate dielectric stacks : nano-electronic semiconductor devices.  pp.73-85,  2006.  Dordrecht.  Springer
シリーズ名: NATO science series. Series 2, Mathematics, physics and chemistry
シリーズ巻号: 220
2.

国際会議録
国際会議録
2. *ELECTRON MICROSCOPY OF ORDERING RELATED DEFECTS IN ALLOYS
Broddin, D. ; Leroux, C. ; van Tendeloo, G.
出版情報: High resolution electron microscopy of defects in materials : symposium held April 16-18, 1990, San Francisco, California, USA.  pp.27-38,  1990.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 183
3.

国際会議録
国際会議録
3. Electrical Characterization of High k Devices: Charges and Traps Effects on Instability, Reliability and Mobility Behavior
Reimbold, G. ; Mitard, J. ; Casse, M. ; Garros, X. ; Leroux, C. ; Thevenod, L. ; Martin, F.
出版情報: Silicon nitride, silicon dioxide thin insulating films, and other emerging dieletrics VIII : proceedings of the international symposium.  pp.437-455,  2005.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2005-01
4.

国際会議録
国際会議録
4. Electrical Modeling and Simulation of Nanoscale MOS Devices With a High-Permittivity Dielectric Gate Stack
Autran, J.L. ; Munteanu, D. ; Houssa, M. ; Bescond, M. ; Garros, X. ; Leroux, C.
出版情報: Integration of advanced micro- and nanoelectronic devices - critical issues and solutions : symposium held April 13-16, 2004, San Francisco, California, U.S.A..  pp.177-188,  2004.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 811