1.

国際会議録
国際会議録
1. Characterization of Point Defects in Impurity-Doped GaAs by Slow Positrons
Wei,L. ; Lee,J.L. ; Tanigawa,S. ; Kawabe,M.
出版情報: Positron annihilation : Proceedings of the 9th International Conference on Positron Annihilation, August 26-31, 1991, Szombathely, Hungary.  Pt.3  pp.1487-1490,  1992.  Aederlmannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 105-110
2.

国際会議録
国際会議録
2. The Study of Surface State of III-V Compound Semiconductors by Slow Positrons
Wei,L. ; Lee,J.L. ; Tanigawa,S. ; Oigawa,H. ; Nannichi,Y.
出版情報: Positron annihilation : Proceedings of the 9th International Conference on Positron Annihilation, August 26-31, 1991, Szombathely, Hungary.  Pt.3  pp.1495-1498,  1992.  Aederlmannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 105-110
3.

国際会議録
国際会議録
3. The Effect of Point Defects on the Electrical Activation of Si-Implanted GaAs During Rapid Thermal Annealing Studied by Slow Positrons
Wei,L. ; Lee,J.L. ; Tanigawa,S. ; Nakagawa,T. ; Ohta,K.
出版情報: Positron annihilation : Proceedings of the 9th International Conference on Positron Annihilation, August 26-31, 1991, Szombathely, Hungary.  Pt.3  pp.1491-1494,  1992.  Aederlmannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 105-110
4.

国際会議録
国際会議録
4. Influence of oxygen precipitates on the measurement of minority carrier diffusion length in p-type silicon material using surface photovoltage technique
Ma,Y. ; Lee,J.L. ; Benton,J.L. ; Boone,T. ; Eaglesham,D.J. ; Higashi,G.S.
出版情報: In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing.  pp.17-24,  1997.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 3215