1.

国際会議録
国際会議録
1. The Closed-Form Solutions for the Breakdown Voltages of 6H-SiC Reachthrough Diodes
Lee, You-Sang ; Byeon, D-S. ; Choi, Y-I. ; Park, I-Y. ; Han, Min-Koo
出版情報: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.143-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 512
2.

国際会議録
国際会議録
2. The Estimation and Revision of Barrier Heights in 4H-SiC and 6H-SiC Schottky Diodes
Lee, You-Sang ; Kim, D-Y. ; Oh, J-K. ; Han, M-K. ; Choi, Y-I.
出版情報: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.175-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 512
3.

国際会議録
国際会議録
3. The Temperature Dependent Breakdown Voltage For 4H- and 6H-SiC Diodes
Lee, You-Sang ; Han, M.K. ; Choi, Y.I.
出版情報: Wide-bandgap electronic devices.  pp.T6.4-,  2001.  Warrendale, PA..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 622