1.

国際会議録
国際会議録
1. DEPOSITION OF HEAVILY-DOPED μc-SILICON THIN FILMS BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION PROCESS (remote PECVD)
Wang, C: ; Bjorkman, C.H. ; Lee, D.R. ; Williams, M.J. ; Lucovsky, G.
出版情報: Chemical perspectives of microelectronic materials II : symposium held November 26-28, 1990, Boston, Massachusetts, U.S.A..  pp.277-282,  1991.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 204
2.

国際会議録
国際会議録
2. DOPANT SITE LOCATION IN DUAL-IMPLANTED GaP USING {111} PLANAR CHANNELING
Parikh, N.R. ; Kao, C.T. ; Lee, D.R. ; Muse, J. ; Swanson, M.L. ; Haynes, T.E. ; Venkatasubramanian, R. ; Timmons, M.
出版情報: Beam-solid interactions : physical phenomena : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.671-676,  1990.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 157
3.

国際会議録
国際会議録
3. STUDIES OF MOS HETEROJUNCTION DEVICES USING DOPED μc-Si AND a-Si
Lee, D.R. ; Bjorkman, C.H. ; Wang, C. ; Lucovsky, G.
出版情報: Amorphous silicon technology 1991 : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A..  pp.395-400,  1991.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 219
4.

国際会議録
国際会議録
4. WORK FUNCTION DIFFERENCE BETWEEN N-TYPE μc-Si GATE ELECTRODES DEPOSITED BY REMOTE PECVD AND P-TYPE c-Si SUBSTRATES IN MOS CAPACITORS
Lee, D.R. ; Lucovsky, G.
出版情報: Amorphous silicon technology, 1992.  pp.979-984,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 258
5.

国際会議録
国際会議録
5. INTRINSIC GROWTH STRESS IN THERMALLY GROWN AND ANNEALED SiO2 THIN FILMS: CONTROL OF STRESS-INDUCED ELECTRONICALLY ACTIVE DEFECTS AT Si/SiO2 INTERFACES
Bjorkman, C.H. ; Lee, D.R. ; Lucovsky, G.
出版情報: Evolution of thin-film and surface microstructure : symposium held November 26-December 1, 1990, Boston, Massachusetts, U.S.A..  pp.271-276,  1991.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 202
6.

国際会議録
国際会議録
6. Deposition of Device-Quality Dielectric Thin Films by Remote Plasma-Enhanced Chemical-Vapor Deposition (RPECVD) and Rapid Thermal Annealing (RTA)
Lucovsky, G. ; Lu, Z. ; Lee, D.R.
出版情報: AIchE 1994 Annual Meeting : November 13-18 San Francisco Hilton and Towers Hotel, San Francisco, California.  1994.  New York.  American Institute of Chemical Engineers
シリーズ名: AIChE meeting [papers]
シリーズ巻号: 1994
7.

国際会議録
国際会議録
7. Synchrotron X-ray Studies of Molecular Ordering in Confined Liquids
Sinha, S.K. ; Kim, Hyunjung ; Seeck, O.H. ; Lee, D.R. ; Kaendler, I.D. ; Shu, D. ; Basu, J.K.
出版情報: Dynamics in small confining systems V : symposium held November 27-30, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, PA.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 651
8.

国際会議録
国際会議録
8. Nitrogen at Si-SiO2 Interfaces: Chemical Bonding and Electrical Performance
Lucovsky, G. ; Niimi, H. ; Koh, K. ; Lee, D.R. ; Jing, Z.
出版情報: The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface.  pp.441-455,  1996.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 96-1