1.

国際会議録
国際会議録
1. In Situ Monitoring of Thin Film Reactions During Rapid Thermal Annealing: Nickel Silicide Formation
Lavoje, C. ; Purtell, R. ; Cola, C. ; Detavernier, C. ; Desjardins, P. ; Jordan-Sweet, J. ; Cabral, C., Jr. ; d'Heurle, F.M. ; Harper., J.M.E.
出版情報: Rapid thermal and other short-time processing technologies III : proceedings of the international symposium.  pp.455-468,  2002.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2002-11
2.

国際会議録
国際会議録
2. 46 Evaluation of CMOS gate metal materials using in situ characterization techniques
Cabral, C., Jr. ; Lavoje, C. ; Ozcan, A.S. ; Amos, R.S. ; Naroyanan, V. ; Gusev, E.P. ; Jordan-Sweet, J.L. ; Harpe, J.M.E.
出版情報: Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium.  pp.375-384,  2003.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2003-14