1.

国際会議録
国際会議録
1. EFFECTS OF HALOGEN-CONTAINING GAS PLASMA AND RAPID THERMAL ANNEAL TREATMENT ON THE REACTIVE ION ETCHED SILICON
Kwon, Kwang-Ho ; Kim, Bo-Woo ; Park, Hyung-Ho ; Kang, Jin-Yeong ; Yeom, Gun-Yung
出版情報: Diagnostic techniques for semiconductor materials processing : Symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A..  pp.481-,  1994.  Pittsburgh.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 324
2.

国際会議録
国際会議録
2. THE DRY DEVELOPMENT PROCESS OF PLASMA IN REACTIVE ION ETCHING MODE
Kwon, Kwang-Ho ; Yun, Sun Jin ; Park, Byung-Sun ; Jeon, Young-Jin
出版情報: Plasma processing and synthesis of materials III : symposium held April 17-19, 1990, San Francisco, California, U.S.A..  pp.323-328,  1991.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 190