1.

国際会議録
国際会議録
1. Deep Defect Relaxation in Hydrogenated Amorphous Silicon: New Experimental Evidence and Implications
Cohen, J. David ; Zhong, Fan ; Kwon, Daewon ; Chen, C-C.
出版情報: Amorphous and microcrystalline silicon technology - 1998 : symposium held April 14-17, 1998, San Francisco, California, U.S.A..  pp.781-,  1999.  Warrendale.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 507
2.

国際会議録
国際会議録
2. New Evidence for Deep Defect Relaxation in Hydrogenated Amorphous Silicon from Junction Capacitance Methods
Cohen, J. David ; Gardner, Adam D. ; Kwon, Daewon
出版情報: Amorphous silicon technology, 1996 : symposium held April 8-12, 1996, San Francisco, California, U.S.A..  pp.679-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 420
3.

国際会議録
国際会議録
3. Ellipsometry Measurement Accuracy of Gate Oxides Under Polysilicon
Jiang, Gary ; Pelcher, Don ; Kwon, Daewon ; Clerico, Jana ; Collins, George
出版情報: Micro- and nanosystems : symposium held December 1-3, 2003, Boston, Massachusetts, U.S.A..  pp.147-152,  2004.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 782