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A Study of the Effect of Growth Rate and Annealing on GaN Buffer Layers on Sapphire

著者名:
掲載資料名:
Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
395
発行年:
1996
開始ページ:
225
出版情報:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992986 [1558992987]
言語:
英語
請求記号:
M23500/395
資料種別:
国際会議録

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