Determination of Minority Carrier Diffusion Lengths in thi Denuded Zones of Silicon Wafers by Surface Photovoltage Measurements
- 著者名:
- 掲載資料名:
- Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999)
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 3975
- 発行年:
- 2000
- 巻:
- Part2
- 開始ページ:
- 908
- 終了ページ:
- 911
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819436016 [0819436011]
- 言語:
- 英語
- 請求記号:
- P63600/3975
- 資料種別:
- 国際会議録
類似資料:
SPIE-The International Society for Optical Engineering |
7
国際会議録
Diffusion Length Measurements of Minority Carriers in Si-SiO2 Using The Photo-Grating Technique
Materials Research Society |
Materials Research Society | |
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |
Electrochemical Society |
National Aeronautics and Space Adminstration |
Electrochemical Society |
12
国際会議録
TEMPERATURE DEPENDENCE OF OPTICAL PROPERTIES AND MINORITY CARRIER DIFFUSION LENGTH IN a-SiGe:H,F
Materials Research Society |