1.

国際会議録
国際会議録
1. CURRICULUM VITAE OF OXIDE PRECIPITATES: FROM NUCLEATION DURING CRYSTAL GROWTH TO THEIR FINAL DESTINATION IN PROCESSED WAFERS
Kissinger, G. ; Vanhellemont, J. ; Lambert, U. ; Dornberger, E. ; Sorge, R. ; Morgenstern, G. ; Grabolla, T. ; Graef, D. ; von Ammon, W. ; Wagner, P. ; Richter, H.
出版情報: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.1095-1112,  1998.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 98-1(2)
2.

国際会議録
国際会議録
2. Oxygen Precipitation and Stacking Fault Formation in Wafers with a Transition from Vacancy-Rich to Interstitial-Rich
Kissinger, G. ; Morgenstern, G. ; Grabolla, T. ; Richter, H. ; Vanhellemont, J. ; Lambert, U. ; Graef, D.
出版情報: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.158-169,  1998.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 98-13
3.

国際会議録
国際会議録
3. Investigation of crystal defects in as-grown and processed silicon wafers and heteroepitaxial layers by infrared light scattering tomography
Kissinger, G. ; Vanhellemont, J. ; Graef, D. ; Zulehner, W. ; Claeys, C. ; Richter, H.
出版情報: ALTECH 95 : analytical techniques for semiconductor materials and process characterization II : proceedings of the Satellite Symposium to ESSDERC 95, The Hague, The Netherlands.  pp.156-164,  1995.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 95-30
4.

国際会議録
国際会議録
4. PL study of oxygen related defects in silicon
Libezny, M. ; Kaniava, A. ; Kissinger, G. ; Nijs, J. ; Claeys, C. ; Vanhellemont, J.
出版情報: ALTECH 95 : analytical techniques for semiconductor materials and process characterization II : proceedings of the Satellite Symposium to ESSDERC 95, The Hague, The Netherlands.  pp.165-172,  1995.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 95-30
5.

国際会議録
国際会議録
5. Grown-in oxide precipitate nuclei in Czochralski silicon substrates and their role in device processing
Kissinger, G. ; Grabolla, T. ; Morgenstern, G. ; Richter, H. ; Graef, D. ; Vanhellemont, J. ; Lambert, U. ; von Ammon, W.
出版情報: Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II.  pp.74-87,  1997.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 97-22
6.

国際会議録
国際会議録
6. D-defects and metal-related flow patterns
Kissinger, G. ; Morgenstern, G. ; Richter, H. ; Vanhellemont, J. ; Graef, D. ; Lambert, U. ; von Ammon, W. ; Wagner, P.
出版情報: Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II.  pp.32-39,  1997.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 97-22
7.

国際会議録
国際会議録
7. Recent Progress in Understanding Oxygen Precipitation in Silicon
Vanhellemont, J. ; Esfandyari, J. ; Obermeier, G. ; Dornberger, E. ; Graef, D. ; Lambert, U. ; Kissinger, G.
出版情報: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.101-124,  1998.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 98-13
8.

国際会議録
国際会議録
8. Influence of Boron Doping on Oxide Precipitate Nucleation and Gettering of Iron Impurities in Low Thermal Budget Processing of Czochralski Silicon
Kissinger, G. ; Vanhellemont, J. ; Morgenstern, G. ; Blietz, M. ; Tittelbach-Helmrich, K. ; Obermejer, G. ; Wahlich, R.
出版情報: Proceedings of the Third International Symposium on Defects in Silicon.  pp.268-279,  1999.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 99-1
9.

国際会議録
国際会議録
9. Defect Related Problems with the On-Chip Integration of Sensors into CMOS Devices
Mueller, T. ; Kissinger, G. ; Benkitsch, A.C. ; Brand, O. ; Baltes, H.
出版情報: Proceedings of the Third International Symposium on Defects in Silicon.  pp.342-354,  1999.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 99-1
10.

国際会議録
国際会議録
10. Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density
Kissinger, G. ; Morgenstern, T. ; Morgenstern, G. ; Erzgraber, H. B. ; Richter, H.
出版情報: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.141-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 378