1.

国際会議録
国際会議録
1. Ion Implantation Induced Damage Accumulation Studied by Rutherford Backscattering Spectrometry and Spectroscopic Ellipsometry
Lohner,T. ; Khanh,N.Q. ; Petrik,P. ; Gyulai,M FriedE.KotaiJ.
出版情報: Materials science applications of ion beam techniques : proceedings of the International Symposium on Materials Science Applications of Ion Beam Techniques, incoeporating the 1st German-Australian Workshop on Ion Beam Analysis, Seeheim, Germany, September 9-12 1996.  pp.229-232,  1997.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 248-249
2.

国際会議録
国際会議録
2. Charge Carrier Lifetime Modification in Silicon by High Energy H+,He+ Ion Implantation
Khanh,N.Q. ; Tutto,P. ; Jaroli,E.N. ; Buiu,O. ; Biro,L.P. ; Paszti,F. ; Mohacsy,T. ; Kovacsics,C. ; Manuaba,A. ; Gyulai,J.
出版情報: Materials science applications of ion beam techniques : proceedings of the International Symposium on Materials Science Applications of Ion Beam Techniques, incoeporating the 1st German-Australian Workshop on Ion Beam Analysis, Seeheim, Germany, September 9-12 1996.  pp.101-106,  1997.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 248-249