Deep Levels in As-Grown and Electron-Irradiated P-Type 4H-SiC

Deep Levels in As-Grown and Electron-Irradiated P-Type 4H-SiC

著者名:

掲載資料名:

Silicon carbide 2006--materials, processing and devices : symposium held April 18-20, 2006, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

911

発行年:

2006

開始ページ:

247

終了ページ:

252

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998674 [1558998675]

言語:

英語

請求記号:

M23500/911

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046615
シリーズID:	PA00000011
会議名:	MRS Spring Meeting : Symposium B
回次:	2006
会議開催地:	San Francisco, California, USA
会議開催年:	2006.04.18-2006.04.20

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1 国際会議録 Deep Levels in Electron-Irradiated n- and p-type 4H-SiC Investigated by Deep Level Transient Spectroscopy K. Danno, T. Kimoto Trans Tech Publications	7 国際会議録 Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition Fujiwara, H., Danno, K., Kimoto, T., Tojo, T., Matsunami, H. Trans Tech Publications
2 国際会議録 Deep Hole Traps in As-Grown 4H-SiC Epilayers Investigated by Deep Level Transient Spectroscopy Danno, K., Kimoto, T. Trans Tech Publications	8 国際会議録 Aluminum and Electron-Irradiation-Induced Deep Levels in n-Type and p-Type 6H-SiC Gong, M., Beling, C. D., Fung, S., Brauer, G., Wirth, H., Skorupa, W., You, Z-P. MRS - Materials Research Society
3 国際会議録 Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS Danno, K., Kimoto, T., Matsunami, H. Trans Tech Publications	9 国際会議録 Isochronal Annealing Study of Deep Levels in Hydrogen Implanted p-Type 4H-SiC G. Alfieri, T. Kimoto Trans Tech Publications
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5 国際会議録 High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers Schoner, A., Fujihira, K., Kimoto, T., Matsunami, H. Trans Tech Publications	11 国際会議録 High-Speed Growth of High-Purity Epitaxial Layers with Specular Surface on 4H-SiC(000-1) Face Danno, K., Kimoto, T., Matsunami, H. Trans Tech Publications
6 国際会議録 Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy S.A. Reshanov, G. Pensl, K. Danno, T. Kimoto, S. Hishiki Trans Tech Publications	12 国際会議録 New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and ⁴He Ion Irradiated 4H SiC F. Yan, R.P. Devaty, W.J. Choyke, T. Kimoto, T. Ohshima Trans Tech Publications

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