1.

国際会議録
国際会議録
1. New flexible building technique for microsystems
Karlsson,S. ; Johansson,S.A.I.
出版情報: Design, characterization, and packaging for MEMS and microelectronics : 27-29 October 1999, Royal Pines Resort, Queensland, Australia.  pp.104-113,  1999.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 3893
2.

国際会議録
国際会議録
2. AFM Study of In Situ Etching of 4H and 6H SiC Substrates
Karlsson,S. ; Nordell,N.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.363-366,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
3.

国際会議録
国際会議録
3. Growth of 4H and 6H SiC in Trenches and Around Stripe Mesas
Nordell,N. ; Karlsson,S. ; Konstantinov,A.O.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.131-134,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
4.

国際会議録
国際会議録
4. Deuterium Incorporation in Acceptor Doped Epitaxial Layers of 6H-SiC
Linnarsson,M.K. ; Janson,M. ; Schoner,A. ; Nordell,N. ; Karlsson,S. ; Svensson,B.G.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.761-764,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
5.

国際会議録
国際会議録
5. SiC Surface Engineering for High Voltage JFET Applications
Ivanov,P.A. ; Kon'kov,0.I. ; Konstantinov,A.O. ; Panteleev,V.N. ; Samsonova,T.P. ; Nordell,N. ; Karlsson,S. ; Harris,C.I.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1081-1084,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
6.

国際会議録
国際会議録
6. Studies of the Ambient Dependent Inversion Capacitance of Catalytic Metal-Oxide-Silicon Carbide Devices Based on 6H- and 4H-SiC Material
Tobias,P. ; Baranzahi,A. ; Lundstrom,I. ; Schoner,A. ; Rottner,K. ; Karlsson,S. ; Martensson,P. ; Spetz,A.Lloyd
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1089-1092,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
7.

国際会議録
国際会議録
7. Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competiticn Epitaxy
Frank,T. ; Troffer,T. ; Pensl,G. ; Nordell,N. ; Karlsson,S. ; Schoner,A.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.681-684,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
8.

テクニカルペーパー
テクニカルペーパー
8. Systems Enhanced by Software for LEV
Cook,P.D. ; Karlsson,S. ; Aspinall,E. ; Sherwood,T.
出版情報: Global emission technology and analysis.  pp.263-272,  1994.  Society of Automotive Engineering, Inc.
シリーズ名: SAE special publication
シリーズ巻号: SP-1043