1.

国際会議録
国際会議録
1. Reduced Al-Ga Interdiffusion in GaAs/AlGaAs Multiple-Quantum-Well Structure by Introducing Low Hydrogen Content SiNx Capping Layer for dielectric Cap Quantum-Well Disordering
Choi, W. J. ; Han, S. M. ; Shah, S. I. ; Choi, S. G. ; Woo, D. H. ; Lee, S. ; Kim, H. J. ; Han, I. K. ; Kim, s. H. ; Lee, J. I. ; Kang, K. N. ; Cho, J.
出版情報: Infrared applications of semiconductors II : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.419-,  1998.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 484
2.

国際会議録
国際会議録
2. Control of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering by changing NH3 flow rate during the growth of SiNx capping layer
Choi, W. J. ; Yi, H. T. ; Woo, D. H. ; Lee, S. ; Kim, S. H. ; Kang, K. N. ; Cho, J.
出版情報: Infrared applications of semiconductors III : symposium held November 29-December 2, 1999, Boston, Massachusetts, U.S.A..  pp.515-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 607