1.

国際会議録
国際会議録
1. Effects of the High-Refractive Index SiN Passivation on AlGaN/GaN HFETs With a Very Low Gate-Leakage Current
Kambayashi, Hiroshi ; Wada, Takahiro ; Ikeda, Nariaki ; Yoshida, Seikoh
出版情報: GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A..  pp.69-76,  2006.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 892
2.

国際会議録
国際会議録
2. High Power AlGaN/GaN Schottky Barrier Diode With 1000 V Operation
Yoshida, Seikoh ; Ikeda, Nariaki ; Li, Jiang ; Wada, Takahiro ; Kambayashi, Hiroshi ; Takehara, Hironari
出版情報: GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A..  pp.63-68,  2006.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 892