OXYGEN PRECIPITATION BEHAVIOR IN SILICON DURING CZOCHRALSKI CRYSTAL GROWTH

OXYGEN PRECIPITATION BEHAVIOR IN SILICON DURING CZOCHRALSKI CRYSTAL GROWTH

著者名:

Hourai, M.

掲載資料名:

Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1994-10

発行年:

1994

開始ページ:

156

終了ページ:

167

総ページ数:

12

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770422 [1566770424]

言語:

英語

請求記号:

E23400/941387

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014119
シリーズID:	PA00000028
会議名:	International Symposium on Silicon Materials Science and Technology
回次:	7th
会議開催地:	San Francisco, CA, USA
会議開催年:	1994.05.23-1994.05.27

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2 国際会議録 INFLUENCE OF GROWN - IN DEFECTS IN CZ CRYSTAL ON GATE OXIDE INTEGRITY Sano, M., Hourai, M., Sumita, S., Shigematsu, T. Electrochemical Society	8 国際会議録 INVITED: NATURE AND GENERATION OF GROWN-IN DEFECTS IN CZOCHRALSKI SILICON CRYSTALS Hourai, M., Nishikawa, H., Tanaka, T., Umeno, S., Asayama, E., Nomachi, T., Kelly, G. Electrochemical Society
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6 国際会議録 Control of Grown-in Defects in Czochralski Silicon Crystals Hourai, M., Kelly, G.P., Tanaka, T., Umeno, S., Ogushi, S. Electrochemical Society	12 国際会議録 Control of grown-in defects in nitrogen-doped CZ silicon crystal for new generation devices Hourai, M., Ono, T., Umeno, S., Tanaka, T., Asayaoia, E., Nishikawa, H., Sano, M., Tsuya, H. Electrochemical Society

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