1.

国際会議録
国際会議録
1. Low Temperature Thin Oxide Film Formation by Microwave Excitation High Density Plasma Direct Oxidation
Kaihara, R. ; Hirayama, M. ; Ohmi, T.
出版情報: Proceedings of the International Symposium on Thin Film Materials, Processes, Reliability, and Applications, Thin Film Processes.  pp.223-230,  1997.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 97-30
2.

国際会議録
国際会議録
2. Low-Temperature Formation of SiO2 and High Dielectrics Constant Material for ULSI in the 21st Century
Ohmi, T. ; Sekine, K. ; Kaihara, R. ; Saito, Y. ; Shirai, Y. ; Hirayama, M.
出版情報: Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A..  pp.3-,  1999.  Warrendale, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 567