FET on ultrathin SOI (fabrication and research)

FET on ultrathin SOI (fabrication and research)

著者名:

Naumova, O.V. ( Institute of Semiconductor Physics (Russia) )

Antonova, I.V. ( Institute of Semiconductor Physics (Russia) )

Popov, V.P. ( Institute of Semiconductor Physics (Russia) )

Nastaushev, Y.V. ( Institute of Semiconductor Physics (Russia) )

Gavrilova, T.A. ( Institute of Semiconductor Physics (Russia) )

Kachanova, M.M. ( Institute of Semiconductor Physics (Russia) )

Litvin, L.V. ( Institute of Semiconductor Physics (Russia) )

Aseev, A.L. ( Institute of Semiconductor Physics (Russia) )

さらに 3 件

掲載資料名:

Micro- and Nanoelectronics 2003

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

5401

発行年:

2004

開始ページ:

323

終了ページ:

331

総ページ数:

9

出版情報:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819453242 [0819453242]

言語:

英語

請求記号:

P63600/5401

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013753
シリーズID:	PA00000029
会議名:	Micro- and Nanoelectronics
回次:	2003
会議開催地:	Zvenigorod, Russia
会議開催年:	2003.10.06-2003.10.10

類似資料:

1 国際会議録 Low dimension properties of nanostructures on ultra thin layers of silicon formed by oxidation of ion cut SOI wafers and electron lithography Popov, V.P., Aseev, A.L., Antonova, I.V., Nastaushev, Yu.V., Gavrilova, T.A., Naumova, O.V., Franzusov, A.A., Feafanov, … Kluwer Academic Publishers	7 国際会議録 Charge accumulation in oxides of SOI wafers fabricated by hydrogen slicing Naumova, O.V., Frantzusov, A.A., Nikolaev, D.V., Popov, V.P. Electrochemical Society
2 国際会議録 Radiation effects in SOI: Irradiation by high energy ions and electrons Antonova, I.V., Stano, J., Naumova, O.V., Skuratov, V.A., Popov, V.P. Kluwer Academic Publishers	8 国際会議録 Defects and their electronic properties in high-pressure-annealed SOI structures sliced by hydrogen Popov, V.P., Gutakovskii, A.K., Safronov, L.N., Tyschenko, I.E., Zhuravlev, S.K., Talochkin, A.B., Antonova, A.I., … Kluwer Academic Publishers
3 国際会議録 Total dose behavior of partially depleted DeleCut SOI MOSFETs Naumova, O.V., Frantzusov, A.A., Antonova, I. V., Popov, V.P. Kluwer Academic Publishers	9 国際会議録 Changes In the parameters of silicon-on-insulator structures under irradiation Antonova, I.V., Nikolaev, D.V., Nauniova, O.V., Smagulova, S.A., Popov, V.P. Electrochemical Society
4 国際会議録 Traps at the Bonded Si/SiO2 Interface in Silicon-on-Insulator Structures Antonova, I.V., Stano, J., Nikolaev, D.V., Naumova, O.V., Popov, V.P., Skuratov, V.A. Electrochemical Society	10 国際会議録 Formation and evolution of the oxygen precipitates in CZ-Si upon high pressure- high temperature treatment Antonova, I.V., Misiuk, A., Popov, V.P., Plotnikov, A.E., Surma, B. Electrochemical Society
5 国際会議録 Gamma radiation tolerance of 0.5-μm SOI MOSFETs Naumova, O.V., Frantsuzov, A.A., Popov, V.P. SPIE - The International Society of Optical Engineering	11 国際会議録 Modification of Si/SiO2 interface in SOI structures by hydrogen implantation: radiation tolerance Antonova, I.V. Electrochemical Society
6 国際会議録 Nanotechnologies in semiconductor electronics Pchelyakov, O. P., Toropov, A. I., Popov, V. P., Latyshev, A. V., litvin, L. V., Nastaushev, Yu. V., Aseev, A. L. SPIE-The International Society for Optical Engineering	12 国際会議録 Effect of stress on defect transformation in hydrogen-implanted silicon and SOI structures Antonova,J.V., Popov,V.P., Bak-Misiuk,J., Domagala,J., Misiuk,A., Obodnikov,V.I., Gutakovskii,A.K., Romano-Rodriguez,A. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12