1.

国際会議録
国際会議録
1. Near-surface sensitivity suppression way for diffuse reflective optical tomography: simulation and a phantom study
K. Fukuda ; M. Fujii
出版情報: Diffuse optical imaging of tissue : 19-21 June 2007, Munich, Germany.  2007.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 6629
2.

国際会議録
国際会議録
2. Acceleration Factors in Acceleration Life Test of Thermal Oxides on 4H-SiC Wafers
J. Senzaki ; A. Shimozato ; K. Fukuda
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.635-638,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
3.

国際会議録
国際会議録
3. Analysis of Gate Oxide Nitridation Effect on SiC MOSFETs by Using Hall Measurement and Split C-V Measurement
M. Tsujimura ; H. Kitai ; H. Shiomi ; K. Kojima ; K. Fukuda
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.441-444,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
4.

国際会議録
国際会議録
4. Improved Simulation Models for Designing Novel Edge Termination and Current Spreading Layers for 3300-V-Class 4H-SiC Implantation-Epitaxial MOSFETs with Low On-Resistance and Robustness
H. Shiomi ; T. Tsuji ; N. Ohse ; Y. Onishi ; K. Fukuda
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.966-969,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
5.

国際会議録
国際会議録
5. 3300V-Class 4H SiC Implantation-Epitaxial Mosfets with Low Specific On-Resistance of 11.6mΩcm2 and High Avalanche Withstanding Capability
T. Tsuji ; H. Shiomi ; N. Ohse ; Y. Onishi ; K. Fukuda
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.962-965,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
6.

国際会議録
国際会議録
6. Controlling Characteristics of 4H-SiC(0001) p-Channel MOSFETs Fabricated on Ion-Implanted n-Well
M. Okamoto ; M. Iijima ; T. Nagano ; K. Fukuda ; H. Okumura
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.781-784,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
7.

国際会議録
国際会議録
7. Electrically Detected Magnetic Resonance (EDMR) Studies of SiC-SiO2 Interfaces
T. Umeda ; R. Kosugi ; K. Fukuda ; N. Morishita ; T. Ohshima
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.427-432,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
8.

国際会議録
国際会議録
8. 4H-SiC p-Channel MOSFETs with Epi-Channel Structure
M. Okamoto ; T. Yatsuo ; K. Fukuda ; H. Okumura ; K. Arai
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.711-714,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
9.

国際会議録
国際会議録
9. Fabrication of P-Channel MOSFETs on 4H-SiC C-Face
M. Okamoto ; M. Iijima ; T. Yatsuo ; T. Nagano ; K. Fukuda
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.653-656,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
10.

国際会議録
国際会議録
10. Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face
S. Harada ; M. Kato ; T. Yatsuo ; K. Fukuda ; K. Arai
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.675-678,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603