1.

国際会議録
国際会議録
1. 50 Characterization of the Effect of High-k Process Conditions on the Performance of Flash Memory by a DOE Method
Jean, J. ; Shiraiwa, H. ; Orimoto, T. ; Zheng, W. ; Suh, Y. ; Ding, M. ; Chan, S. ; Sachar, H. ; Torii, S. ; Xue, L. ; Randolph, M. ; Ogle, B. ; Raisanen, P.
出版情報: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.411-417,  2005.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2005-05
2.

国際会議録
国際会議録
2. Hf Cross-Contamination in RTCVD System and its Effect on Gate Oxide Lntegnty
Jean, J. ; Vermeire, B. ; Parks, H. ; Raghavan, S. ; Ogle, B.
出版情報: Rapid thermal and other short-time processing technologies III : proceedings of the international symposium.  pp.215-222,  2002.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2002-11