1.

国際会議録
国際会議録
1. Optically Detected Wagnetic Resotrance Studies of Non-Radiative Recombination Centres in 6H SiC
Son,N.T. ; Wagner,Mt. ; Sorman,E. ; Chen,W.M. ; Monemar,B. ; Janzen,E.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.599-602,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
2.

国際会議録
国際会議録
2. Power Schottky Rectifiers and Microwave Transistors in 4H-SiC
Wahab,Q. ; Rudner,S. ; Janzen,E.
出版情報: Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999).  Part1  pp.668-671,  2000.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 3975
3.

国際会議録
国際会議録
3. The pseudo-donor electronic states of a metastable defect in silicon studied by uniaxial stress spectroscopy
Svensson,J.H. ; Janzen,E. ; Kordina,O. ; Monemar,B.
出版情報: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.1  pp.327-332,  1992.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 83-87
4.

国際会議録
国際会議録
4. Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD
Ellison,A. ; Kimoto,T. ; Ivanov,I.G. ; Wahab,Q. ; Henry,A. ; Kordina,O. ; Zhang,J. ; Hemmingsson,C.G. ; Gu,C.-Yu. ; Leys,M.R. ; Janzen,E.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.103-106,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
5.

国際会議録
国際会議録
5. Thickness Contour Mapping of SiC Epi-Films on SiC Substrates
MacMillan,M.F. ; Narfgren,P.O. ; Henry,A. ; Janzen,E.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.645-648,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
6.

国際会議録
国際会議録
6. The Effects of Growth Conditions in Dislocation Density in SiC Epi-Layers Produced by the Sublimation Epitaxy Technique
Kakanakova-Georgieva,A. ; MacMillan,M.F. ; Nishino,S. ; Yakimova,R. ; Janzen,E.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.147-150,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
7.

国際会議録
国際会議録
7. Domain Occurrence in SiC Epitaxial Layers Grown by Sublimation
Tuominen,M. ; Yakimova,R. ; Kakanakova-Georgieva,A. ; MacMillan,M.F. ; Syvajarvi,M. ; Janzen,E.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.151-154,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
8.

国際会議録
国際会議録
8. Growth and Characterisation of SiC Power Device Material
Kordina,O. ; Henry,A. ; Janzen,E. ; ,C.H.Carter,Jr.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.97-102,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
9.

国際会議録
国際会議録
9. CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the(0001)Basal Plane
Hallin,C. ; Ellison,A. ; Ivanov,I.G. ; Henry,A. ; Son,N.T. ; Janzen,E.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.123-126,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
10.

国際会議録
国際会議録
10. Infrared Reflectance of Extremely Thin AIN Epi-Films Deposited on SiC Substrates
MacMillan,M.F. ; Forsberg,U. ; Hultman,P.O.A.Persson.L. ; Janzen,E.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.649-652,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268