A Small-Signal Non-Quasistatic Model of Partially Depleted SOI MOSFETs

A Small-Signal Non-Quasistatic Model of Partially Depleted SOI MOSFETs

著者名:

掲載資料名:

Physics of - Semiconductor Devices -

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3316

発行年:

1998

巻:

Part 2

開始ページ:

1076

終了ページ:

1079

出版情報:

New Delhi: Narosa Publishing House

ISSN:

0277786X

ISBN:

9780819427564 [081942756X]

言語:

英語

請求記号:

P63600/3316

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016921
シリーズID:	PA00000029
会議名:	International Workshop on the Physics of Semiconductor Devices - IWDPSD
回次:	1997 : 9th
会議開催地:	Delhi, India
会議開催年:	1997.12.16-1997.12.20

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1 国際会議録 DC and AC models of partially-depleted SOI MOSFETs in weak inversion Tomaszewski, D., Domanski, K., Lukasiak, L., Zareba, A., Gibki, J., Jakubowski, A. Kluwer Academic Publishers	7 国際会議録 The Comparison of SOI Transistor Models Jurczak,M., Jakubowski,A., Lukasiak,L. SPIE-The International Society for Optical Engineering, Narosa
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3 国際会議録 Measurement and Modelling of SOI MOSFETs Capacitances Tomaszewski, D., Lukasiak, L., Gibki, J., Domanski, K., Jakubowski, A., Zareba, A. SPIE-The International Society for Optical Engineering	9 国際会議録 Measurement of generation lifetime in partially depleted SOI MOSFETs Shin, H C, Racanelli, M, Huang, W M, Ford, J, Foersiner, J, Shin, H, Wetteroth, T, Hong, S Q, Wilson, S R, Schroder, D … Electrochemical Society
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