1.

国際会議録
国際会議録
1. (7.4) 3:20 - 3:50 PM - Optoelectronic Substrates by SiGen NanoTecTM-A General Layer-Transfer (LT) Approach (Invited)
Malik, I. J. ; Lamm, A. J. ; Sullivan, J. ; Kang, S. ; Jacy, D. ; Kirk, H. ; Ong, P. J. ; Henley, F. J. (Silicon Genesis)
出版情報: SiGe: materials, processing, and devices : proceedings of the First international symposium.  pp.543-554,  2004.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2004-07
2.

国際会議録
国際会議録
2. Epitaxial Stacking Faults Formed at the Periphery of the N+ Burled Collector
Nagalingam, S. ; Jacy, D. ; Briggs, K. ; Massetti, D.
出版情報: Proceedings of the Symposium on the Degradation of Electronic Devices due to Device Operation as well as Crystalline and Process-Induced Defects.  pp.94-100,  1994.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 1994-1
3.

国際会議録
国際会議録
3. Depth profile characterization of hydrogen implanted silicon using spectroscopic ellipsometry
Gubiotti, T. ; Jacy, D. ; Hoobler, R.J.
出版情報: Process and Materials Characterization and Diagnostics in IC Manufacturing.  pp.105-114,  2003.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 5041