1.

国際会議録
国際会議録
1. 4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates
J.H. Yim ; H.K. Song ; J.H. Moon ; H.S. Seo ; J.H. Lee ; H.J. Na ; J.B. Lee ; H.J. Kim
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.763-766,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
2.

国際会議録
国際会議録
2. Electrical Properties of Atomic-Layer-Deposited La2O3/Thermal-Nitrided SiO2 Stacking Dielectric on 4H-SiC(0001)
J.H. Moon ; K.Y. Cheong ; D.I. Eom ; H.K. Song ; J.H. Yim ; J.H. Lee ; H.J. Na ; W. Bahng ; N.K. Kim ; H.J. Kim
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.643-646,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
3.

国際会議録
国際会議録
3. Electrical Properties of Metal-Oxide-Semiconductor (MOS) Structures on 4H-SiC(0001) Formed by Oxidizing Pre-Deposited SixNy
J.H. Moon ; D.H. Kim ; H.K. Song ; J.H. Yim ; W. Bahng ; N.K. Kim ; K.S. Seo ; H.J. Kim
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.647-650,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
4.

国際会議録
国際会議録
4. Homoepitaxial Growth of Vanadium-Doped 4H-SiC Using Bis-Trimethylsilylmethane and Verrocene Precursors
H.K. Song ; H.S. Seo ; J.H. Moon ; J.H. Yim ; J.H. Lee ; S.Y. Kwon ; H.J. Na ; H.J. Kim
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.113-116,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
5.

国際会議録
国際会議録
5. Homoepitaxial Growth of 4H-SiC by Hot-Wall CVD Using BTMSM
H.S. Seo ; H.G. Song ; J.H. Moon ; J.H. Yim ; M.S. Oh
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.151-154,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
6.

国際会議録
国際会議録
6. Effect of Post-Oxidation Annealing on High-Temperature Grown SiO2/4H-SiC Interface
J.H. Moon ; K.Y. Cheong ; H.K. Song ; J.H. Yim ; M.S. Oh
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.731-734,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
7.

国際会議録
国際会議録
7. Improved 4H-SiC MOS Interface Produced by Oxidized-SiN Gate Oxide
J.H. Moon ; J.H. Yim ; H.S. Seo ; C.H. Kim ; D.H. Lee
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.511-514,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648