1.

国際会議録
国際会議録
1. Long Carrier Lifetime in 4H-SiC Epilayers Using Chlorinated Precursors
A. Shrivastava ; P.B. Klein ; E.R. Glaser ; J.D. Caldwell ; A.V. Bolotnikov
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.291-294,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
2.

国際会議録
国際会議録
2. Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers
N.A. Mahadik ; R.E. Stahlbush ; J.D. Caldwell ; M.J. O'Loughlin ; A.A. Burk
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.297-300,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
3.

国際会議録
国際会議録
3. Ultraviolet Photoluminescence Imaging of Stacking Fault Contraction in 4H-SiC Epitaxial Layers
N.A. Mahadik ; R.E. Stahlbush ; J.D. Caldwell ; K.D. Hobart
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.391-394,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
4.

国際会議録
国際会議録
4. Luminescence Imaging of Extended Defects in SiC via Hyperspectral Imaging
J.D. Caldwell ; L. Lombez ; A. Delamarre ; J.F. Guillemoles ; B. Bourgoin
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.403-406,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
5.

国際会議録
国際会議録
5. Effect of Bipolar Gate-to-Drain Current on the Electrical Properties of Vertical Junction Field Effect Transistors
V. Veliadis ; H. Hearne ; E.J. Stewart ; J.D. Caldwell ; M. Snook
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.719-722,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
6.

国際会議録
国際会議録
6. Measurement of Local Temperatures Using (micro)-Raman of SiC and AlGaN-GaN/SiC Power and RF Devices
O.J. Glembocki ; J.D. Caldwell ; J.A. Mittereder ; J.P. Calame ; S.C. Binari
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1111-1114,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
7.

国際会議録
国際会議録
7. Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes
J.D. Caldwell ; R.E. Stahlbush ; O.J. Glembocki ; K.D. Hobart ; K.X. Liu
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.273-278,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
8.

国際会議録
国際会議録
8. Synchrotron X-Ray Topographic Studies of Recombination Activated Shockley Partial Dislocations in 4H-Silicon Carbide Epitaxial Layers
Y. Chen ; X.R. Huang ; N. Zhang ; M. Dudley ; J.D. Caldwell
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.357-360,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
9.

国際会議録
国際会議録
9. Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers
K.X. Liu ; X. Zhang ; R.E. Stahlbush ; M. Skowronski ; J.D. Caldwell
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.345-348,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
10.

国際会議録
国際会議録
10. Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors
V. Veliadis ; H. Hearne ; W. Chang ; J.D. Caldwell ; E.J. Stewart
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.1013-1016,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720