1.

国際会議録
国際会議録
1. A DC Comparison Study between H-Intercalated and Native Epi-Graphenes on SiC Substrates
M. Winters ; M. Thorsell ; J. ul Hassan ; N. Rorsman ; E. Janzén
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.129-132,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
2.

国際会議録
国際会議録
2. Surface Evolution of 4H-SiC(0001) during In Situ Surface Preparation and its Influence on Graphene Properties
J. ul Hassan ; A. Meyer ; S. Cakmakyapan ; O. Kazar ; J. Ingo Flege
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.157-160,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
3.

国際会議録
国際会議録
3. Surface Preparation of 4 ° Off-Axis 4H-SiC Substrate for Epitaxial Growth
X. Li ; J. ul Hassan ; O. Kordina ; E. Janzén ; A. Henry
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.225-228,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
4.

国際会議録
国際会議録
4. On-Axis Homoepitaxial Growth of 4H-SiC PiN Structure for High Power Applications
J. ul Hassan ; I. Booker ; L. Lilja ; A. Hallén ; M. Fagerlind
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.173-176,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
5.

国際会議録
国際会議録
5. Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers
L. Lilja ; J. ul Hassan ; I.D. Booker ; P. Bergman ; E. Janzén
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.637-640,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
6.

国際会議録
国際会議録
6. Low Density of Near-Interface Traps at the Al2O3/4H-SiC Interface with Al2O3 Made by Low Temperature Oxidation of Al
R.Y. Khosa ; E.Ö. Sveinbjörnsson ; M. Winters ; J. ul Hassan ; R. Karhu ; E. Janzén ; N. Rorsman
出版情報: Silicon Carbide and Related Materials 2016.  pp.135-138,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 897
7.

国際会議録
国際会議録
7. Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers
L. Lilja ; I. Farkas ; I. Booker ; J. ul Hassan ; E. Janzén ; J.P. Bergman
出版情報: Silicon Carbide and Related Materials 2016.  pp.238-241,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 897