1.

国際会議録
国際会議録
1. Analysis of PD AOI pMOSFET Device Performance Enhancement due to Direct-Tunneling Current in the Partial n+ Poly Gate
G. Guegan ; J. Pretet ; R. Gwoziecki ; O. Gonnard ; G. Gouget ; P. Touret ; C. Raynaud ; S. Deleonibus
出版情報: Silicon-on-insulator technology and devices 13.  pp.165-172,  2007.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 6(4)
2.

国際会議録
国際会議録
2. Low-Temperature Performance of Ultimate Si-Based MOSFETS
J. Jomaah ; G. Ghibaudo ; S. Cristoloveanu ; A. Vandooren ; F. Dieudonné ; J. Pretet ; F. Lime ; K. Oshima ; B. Guillaumot ; F. Balestra
出版情報: Low temperature electronics and low temperature cofired ceramic based electronic devices : proceedings of the seventh International Symposium on Low Temperature Electronics and the International Symposium on Low Temperature Cofired CeramicBbased Electronic Devices.  pp.118-128,  2003.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2003-27