1.

国際会議録
国際会議録
1. A Comparison of High Temperature Performance of SiC DMOSFETs and JFETs
S.H. Ryu ; S. Krishnaswami ; B.A. Hull ; B. Heath ; F. Husna ; J. Richmond ; A. Agarwal ; J. Palmour ; J. Scofield
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.775-778,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
2.

国際会議録
国際会議録
2. Bipolar Degradation of High Voltage 4H-SiC p-i-n Diodes in Pulse Regime
M.E. Levinshtein ; P.A. Ivanov ; J. Palmour ; A. Agarwal ; M.K. Das
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.539-542,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
3.

国際会議録
国際会議録
3. Progress on the Development of 10 kV 4H-SiC Pin Diodes for High Current/High Voltage Power Handling Applications
B.A. Hull ; J.J. Sumakeris ; M. Das ; J. Richmond ; J. Palmour
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.895-900,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
4.

国際会議録
国際会議録
4. Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process
P.A. Ivanov ; M.E. Levinshtein ; M.S. Boltovets ; V.A. Krivutsa ; J. Palmour ; M. Das ; B.A. Hull
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.921-924,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
5.

国際会議録
国際会議録
5. Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes
Q.C. Zhang ; A. Agarwal ; A.A. Burk ; M.J. O'Loughlin ; J. Palmour
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.331-334,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
6.

国際会議録
国際会議録
6. 9 kV 4H-SiC IGBTs with 88 mΩ・cm2 of R diff, on
Q.C. Zhang ; C. Jonas ; B. Heath ; M. Das ; S.H. Ryu ; A. Agarwal ; J. Palmour
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.771-774,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
7.

国際会議録
国際会議録
7. Generation-recombination noise in forward-biased 4H-SiC p-n diode
S. L. Rumyantsev ; A. Dmitriev ; M. Levinshtein ; D. Veksler ; M. S. Shur ; J. Palmour ; M. Das ; B. Hull
出版情報: Noise and fluctuations in circuits, devices, and materials : 21-24 May 2007, Florence, Italy.  2007.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 6600