Prospect of Hf-Dared Gate Dielectric by PVD with FUSI Gate for LSTP Application | 東京工業大学附属図書館文献データベース

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Prospect of Hf-Dared Gate Dielectric by PVD with FUSI Gate for LSTP Application

著者名:

さらに 9 件

掲載資料名:

Physics and technology of high-k gate dielectrics III

シリーズ名:

ECS transactions

シリーズ巻号:

1(5)

発行年:

2006

開始ページ:

269

終了ページ:

286

総ページ数:

18

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774444 [1566774446]

言語:

英語

請求記号:

E23400/1-5

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047099
シリーズID:	PA00000034
会議名:	International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues
回次:	3rd
会議開催地:	Los Angeles, California, USA
会議開催年:	2005.10.16-2005.10.21

類似資料:

1 国際会議録 pVD High-k Gate Dielectrics with FUSI Gate and Influence of PDA Treatment on On-State Drive Current Niwa, M., Mitsuhashi, R., Yamamoto, K., Hayashi, S., Rothchild, A., Kubicek, S., De Gendt, S., Biesemans, S. Springer	7 国際会議録 METAL GATES FOR ADVANCED CMOS TECHNOLOGIES KiTTL, J. A. 1, PAWLAK, M. A., LAUWERS, A., SCHRAM, T., POURTOIS, G., VELOSO, A., Yu, H., HOFFMANN, T., DEMEURISSE, C., … Electrochemical Society
2 国際会議録 High-k Dielectrics Integration Prospects (Invited paper) Kubicek, S., Van Elshocht, S., Delabie, A., Yamamoto, K., Beckx, S., Claes, M., Van Hoornick, N., Kwak, D.-H., Hyun, S., … Electrochemical Society	8 国際会議録 Ni, Pt and Yb Based Fully Silicided (FUSI) Gates for Scaled CMOS Technologies J. A. Kitti, A. Lauwers, M. van Dal, H. Yu, A. Veloso, T. Hoffinann, M. Pawlak, C. Demeurisse, S. Kubicek, M. Niwa, C. … Electrochemical Society
3 国際会議録 Challenges and Opportunities in High-K Gate Dielectric Technology Niwa, M., Harada, Y., Yamamoto, K., Hayashi, S., Mitsuhashi, R., Eriguchi, K., Kubota, M., Hoshino, Y., Kido, Y, Kwong, … Electrochemical Society	9 国際会議録 Effective Workfunction Modulation by As Implantation in Metal Gate Stacks R. Singanamalla, H. Yu, T. Janssens, T. Witters, T. Schram, S. Kubicek, S. DeGendt, M. Jurczak, K. De Meyer Electrochemical Society
4 国際会議録 Challenges in Integration of Metal Gate High-k Dielectrics Gate Stacks Tsai, W., Ragnarrson, L.-A., Schram, T., DeGendt, S., Heyns, M. Electrochemical Society	10 国際会議録 Interface Technology for Advanced Gate Dielectrics* Niwa, M., Harada, Y., Eruguchi, K., Kwong, D.-L. Electrochemical Society
5 国際会議録 Examines integration of Hf-based gate dielectrics with polysilicon gate electrodes. DeGendt Electrochemical Society	11 国際会議録 45. TaN metal gate MOSFETs with aggressively scaled HfO2 dielectrics Lander, R., Schram, T., Lulan, G.S., hooker, J., Vertommen, J., Lee, S., de Weerd, W., Boullart, W., van Elshocht, S, … Electrochemical Society
6 国際会議録 27 Materials Issues of Ni Fully Silicided (FUSI) Gates for CMOS Applications Kittl, J. A., Lauwers, A., Pawlak, M. A., Demeurisse, C., Anil, K. G., Veloso, A., van Dal, M. J. H., Schram, T., Brijs, … Electrochemical Society	12 国際会議録 Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth Y. Yamamoto, S. Harada, K. Seki, A. Horio, T. Mitsuhashi Trans Tech Publications

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