AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers
- 著者名:
- N. X. Liu ( Institute of Semiconductors, China )
- J. C. Yan ( Institute of Semiconductors, China )
- Z. Liu ( Institute of Semiconductors, China )
- P. Ma ( Institute of Semiconductors, China )
- J. X. Wang ( Institute of Semiconductors, China )
- 掲載資料名:
- Solid state lighting and solar energy technologies : 12-14 November 2007, Beijing, China
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 6841
- 発行年:
- 2008
- パート:
- A
- 開始ページ:
- 68410S-1
- 終了ページ:
- 68410S-8
- 総ページ数:
- 8
- 出版情報:
- Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
- ISSN:
- 0277786X
- ISBN:
- 9780819470164 [0819470163]
- 言語:
- 英語
- 請求記号:
- P63600/6841
- 資料種別:
- 国際会議録
類似資料:
Society of Photo-optical Instrumentation Engineers |
Materials Research Society |
SPIE-The International Society for Optical Engineering |
Trans Tech Publications |
SPIE - The International Society of Optical Engineering |
Materials Research Society |
4
国際会議録
The effect of the buffer layer on the structure, mobility and photoluminescence of MBE grown GaN
MRS-Materials Research Society |
Materials Research Society |
Materials Research Society |
Trans Tech Publications |
Materials Research Society |
MRS - Materials Research Society |